2N3634
TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC
2N3634- 2N3635-
140 140
2N3636- 2N3637-
175 175
Unit
TO-39- (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637
Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W PT @ TC = +250C(2) 5.0 W 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg
- Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.71 m W/0C for TA > +250C 2) Derate linearly 28.6 m W/0C for TC > +250C
TO-5- 2N3634, 2N3635
2N3636, 2N3637
- See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 10 m Adc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc...
