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  Microsemi Electronic Components Datasheet  

2N3634 Datasheet

PNP SILICON AMPLIFIER TRANSISTOR

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TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
140 175
140 175
5.0
1.0
1.0
5.0
-65 to +200
Vdc
Vdc
Vdc
Adc
W
W
0C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
Emitter-Base Cutoff Current
2N3634, 2N3635
ICBO
VEB = 3.0 Vdc
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
IEBO
ICEO
Min.
140
175
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
Max.
Unit
Vdc
ηAdc
100 µAdc
10
ηAdc
50 µAdc
10
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3634 Datasheet

PNP SILICON AMPLIFIER TRANSISTOR

No Preview Available !

2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
2N3634, 2N3636
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Symbol
hFE
Min.
25
45
50
50
30
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz
2N3635, 2N3637
2N3634, 2N3636
2N3635, 2N3637
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3634, 2N3636
2N3635, 2N3637
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3634, 2N3636
2N3635, 2N3637
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz f 1.0 MHz
Input Capacitance
VEB = 1.0 Vdc, IC = 0, 100 kHz f 1.0 MHz
Noise Figure
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc
2N3634, 2N3635
VCE = 130 Vdc, IC = 20 mAdc
Test 2
2N3636, 2N3637
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hje
hoe
Cobo
Cibo
NF
55
90
100
100
60
0.65
1.5
2.0
40
80
100
200
Max.
150
300
0.3
0.6
0.8
0.9
8.0
8.5
160
320
600
1200
200
10
75
5.0
3.0
3.0
Unit
Vdc
Vdc
µs
pF
pF
dB
120101
Page 2 of 2


Part Number 2N3634
Description PNP SILICON AMPLIFIER TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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