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  Microsemi Electronic Components Datasheet  

2N3720 Datasheet

Silicon PNP Power Transistors

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7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
FEATURES:
Collector-Emitter Sustaining Voltage:
VCEO(SUS) = 60 Vdc (Min) - 2N3720
DC Current Gain:
hFE = 25-180 @ IC = 1.0 Adc
Low Collector-Emitter Saturation Voltage:
VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
High Current-Gain - Bandwidth Product:
fT = 90 MHz (Typ)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200°C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCEO*
VCB*
VEB*
IC*
IC*
IB*
T STG*
TJ*
PD*
PD*
θ JC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
TC = 25° C
Derate above 25° C
Total Device Dissipation
TA = 25° C
Derate above 25° C
Thermal Resistance
Junction to Case
Junction to Ambient
* Indicates JEDEC registered Data.
MSC1027.PDF 02-24-99
2N3720
Silicon PNP
Power Transistors
TO-5
VALUE
60
60
4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
34.3
1.0
5.71
29
175
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
mW/° C
Watts
mW/° C
° C/W
° C/W


  Microsemi Electronic Components Datasheet  

2N3720 Datasheet

Silicon PNP Power Transistors

No Preview Available !

2N3720
ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VCEO(sus)*
ICEX*
Collector-Emitter
Sustaining Voltage
Collector Cutoff Current
ICBO*
IEBO*
hFE*
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
(Note 1)
IC = 20 mAdc, IB = 0 (Note 1)
VCE = 60 Vdc, VBE(off) = 2.0 Vdc
VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150° C
VCB = 60 Vdc, IE = 0
VBE = 4.0 Vdc, IC = 0
IC = 500 mAdc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc, TC = - 40° C
VCE(sat)*
VBE(sat)*
fT*
Cob*
Cib*
ton*
toff*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Saturation
Voltage
(Note 1)
Current-Gain Bandwidth
Product
(Note 2)
Output Capacitance
Input Capacitance
Turn-on Time
Turn-off Time
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40° C to + 100° C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40° C to + 100° C
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40° C to + 100° C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40° C to + 100° C
IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz
VCB = 10 Vdc, IE = 0, f = 0.1 MHz
VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz
VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc
VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc
Note 1: Pulse Test: Pulse width 300µS, Duty Cycle = 2.0%.
Note 2: fT = | hfe | * ftest
* Indicates JEDEC registered data
VALUE
Min. Max.
60 ----
Units
Vdc
---- 10 µAdc
---- 1.0 mAdc
---- 10 µAdc
---- 1.0 mAdc
20 ---- ----
25 180 ----
15 ---- ----
---- 0.75 Vdc
---- 1.5 Vdc
---- 1.5 Vdc
---- 2.3 Vdc
60 ---- MHz
---- 120 pF
---- 1000 pF
---- 100 ns
---- 400 ns
MSC1027.PDF 02-24-99


Part Number 2N3720
Description Silicon PNP Power Transistors
Maker Microsemi Corporation
Total Page 3 Pages
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