2N3720 Datasheet | Microsemi

FEATURES : - Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: h FE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: f T = 90 MHz (Typ) - Silicon PNP Power Transistors - - DESCRIPTION : These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in mercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 VALUE 60 60 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175 ABSOLUTE MAXIMUM MAXIMUM RATINGS: SYMBOL VCEO- VCB- VEB- IC- IC- IB- T STG- T J- PD- PD- θ CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25° C Derate above 25° C Total Device Dissipation T A = 25° C Derate above 25° C Thermal Resistance Junction to Case Junction to Ambient UNITS Vdc Vdc Vdc Adc Adc Adc °C °C Watts m W/° C Watts m W/° C ° C/W ° C/W - Indicates JEDEC registered Data. MSC1027.PDF 02-24-99 ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)- ICEX- ICBO- IEBO- h FE- CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 1) TEST CONDITIONS IC = 20 m Adc, IB =...