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2N6303 - Silicon PNP Power Transistors

Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Features

  • Silicon PNP Power Transistors.

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Datasheet preview – 2N6303

Datasheet Details

Part number 2N6303
Manufacturer Microsemi
File Size 56.08 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2N6303 Datasheet
Additional preview pages of the 2N6303 datasheet.

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Full PDF Text Transcription

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N6303 High-Speed Switching Medium-Current Switching High-Frequency Amplifiers Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) FEATURES: • • • • Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.
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