* High DC Current Gain
* Monolithic Construction with Built-in Base
* Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collector
* Emitter Voltage 60V 80V VCBO Collector
* Base Voltage 60V 80V VEBO
2N6300
Seme LAB
20.75 KB
Darlington silicon power transistors.
2N6300 2N6301
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
DARLIN.
📁 Related Datasheet
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