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2N6317, 2N6315 - COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS

2N6317 Description

MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad.max.3.61 (0.142) 4.08(0.161) rad.12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLE.

2N6317 Features

* Low Collector Emitter Saturation Voltage
* Low Leakage Current

2N6317 Applications

* Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) VCEO Collector
* Emitter Voltage VCBO Collector
* Base Voltage VEBO Emitter
* Base Voltage IC Collector Current Continuous Peak IB Base C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 2N6317, 2N6315. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2N6317, 2N6315
Manufacturer
Seme LAB
File Size
16.21 KB
Datasheet
2N6315-SemeLAB.pdf
Description
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: 2N6317, 2N6315.
Please refer to the document for exact specifications by model.

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COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS Seme LAB
Seme LAB 2N6317-like datasheet