2N6317, 2N6315 Datasheet - Seme LAB

2N6317 COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS

MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 Base TO 66 (TO-213AA) Pin 2 Emitter.

2N6317 Features

* Low Collector Emitter Saturation Voltage

* Low Leakage Current

* Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) VCEO Collector

* Emitter Voltag

2N6315-SemeLAB.pdf

2N6317 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N6317, 2N6315. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N6317, 2N6315

Manufacturer:

Seme LAB

File Size:

16.21 KB

Description:

Complementary silicon medium power transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N6317, 2N6315.
Please refer to the document for exact specifications by model.

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2N6317 2N6315 COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS Seme LAB

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