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2N697 - (2N696 / 2N697) NPN Transistor

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www.DataSheet.co.kr TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices 2N696 2N696S 2N697 2N697S Qualified Level JAN MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol VCBO VEBO PT TJ, Tstg Symbol RθJC Value 60 5.0 0.6 2.0 -65 to +200 Max. 0.075 Units Vdc Vdc W W 0 C Unit C/mW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 4.0 mW/0C for TA > 250C 2) Derate linearly 13.3 mW/0C for TC > 250C 0 TO-5* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CER ICBO IEBO Min. Max. Unit Vdc 10 0.
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