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TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/99
Devices
Qualified Level
2N696
2N696S
2N697
2N697S
JAN
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 4.0 mW/0C for TA > 250C
2) Derate linearly 13.3 mW/0C for TC > 250C
Symbol
VCBO
VEBO
PT
TJ, Tstg
Symbol
RθJC
Value
60
5.0
0.6
2.0
-65 to +200
Units
Vdc
Vdc
W
W
0C
Max.
0.075
Unit
0C/mW
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
RBE = 10 Ω, IC = 100 mAdc
Collector-Base Cutoff Current
V(BR)CER
VCB = 100 Vdc
VCB = 30 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
ON CHARACTERISTICS (3)
ICBO
IEBO
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
2N696,s
2N697,s
2N696,s
2N697,s
hFE
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VCE(sat)
VBE(sat)
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
TO-5*
*See appendix A for
package outline
Min. Max.
Unit
Vdc
40
10 µAdc
0.1
10 µAdc
20 60
40 120
12.5
20.0
0.3 1.5 Vdc
Vdc
1.3
120101
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