• Part: 2N7369
  • Description: PNP HIGH POWER SILICON TRANSISTOR
  • Manufacturer: Microsemi
  • Size: 216.04 KB
Download 2N7369 Datasheet PDF
2N7369 page 2
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Datasheet Summary

.. TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.0 VEBO Base Current IB 4.0 Collector Current 10 IC . Total Power Dissipation @ TC = +250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC Max. 1.5 TO-254- 1) Derate linearly 0.657 W/ C for TC > 25 C - See appendix A for...