J110
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J110 LOW ON RESISTANCE r DS(on) ≤ 18Ω FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +150°C J110 Benefits: Operating Junction Temperature ‐55°C to +150°C
- Low On Resistance Maximum Power Dissipation
- Low insertion loss Continuous Power Dissipation 350m W
- Low Noise MAXIMUM CURRENT J110 Applications: Gate Current (Note 1) 50m A
- Analog Switches MAXIMUM VOLTAGES
- mutators Gate to Drain Voltage VGDS = ‐25V
- Choppers Gate to Source Voltage VGSS = ‐25V J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.5 ‐‐ ‐4 VDS = 5V, ID = 1µA V VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1m A, VDS = 0V IDSS Drain to Source Saturation...
