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XP1001 Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Overview: 26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Chip Device.

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Datasheet Details

Part number XP1001
Manufacturer Mimix Broadband
File Size 273.79 KB
Description GaAs MMIC Power Amplifier
Download XP1001 Download (PDF)

General Description

Mimix Broadband’s two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +31.0 dBm.

The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector.

This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

Key Features

  • High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain +31.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.

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