X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output.

Chip Device Layout XP1006 MIMIX BROADBAND 10004966 TNO COPYRIGHT 2005 X=4940 Y=4290 General Description Absolute Ma.

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 M.

XP1000

XP1000-BD

XP1001

XP1003

XP1003-BD

XP1005

XP1005-BD

XP1006-FA

XP1008

XP1009

XP1010

XP1011

XP1012