XX1004-BD Datasheet | Mimix Broadband

Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 d Bm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 10.0-13.0/20.0-26.0 GHz Ga As MMIC doubler has a +15.0 d Bm output drive and is an excellent LO doubler that can be used to drive fundamental mixer devices. It is also well suited to drive Mimix's XR1002 receiver device. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 110 m A +0.3 VDC +15.0 d Bm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTBF. It is remended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Units Input Frequency Range (fin) GHz Output Frequency Range (fout) GHz Input Return Loss (S11) d B Output Return Loss (S22) d B Fundamental Level at the Output d Bc RF Input Power (RF Pin) d Bm Output Power at +9.0 d Bm Pin (Pout) d Bm Drain Bias Voltage (Vd1,2) VDC Gate Bias Voltage (Vg1) VDC Gate Bias Voltage (Vg2) VDC Supply Current (Id1,2) (Vd=3.5V, Vg1=-0.7V, Vg2=-0.2 Typical) m A Min. 10.0 20.0 -1.2 -1.2 Typ. TBD TBD -30.0 +9.0 +15.0 +3.5 -0.7 -0.2 70 Max. 13.0 26.0 +5.5 +0.1 +0.1 100 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax:...