• Part: M2V12D20TP-10
  • Description: 512M Double Data Rate Synchronous DRAM
  • Manufacturer: Mitsubishi Electric
  • Size: 754.04 KB
M2V12D20TP-10 Datasheet (PDF) Download
Mitsubishi Electric
M2V12D20TP-10

Description

M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface.

Key Features

  • All address and control input signals are sampled on the crossing of the positive edge of CLK and negative edge of /CLK
  • Output (read) data is referenced to the crossings of CLK and /CLK (both directions of crossing)
  • Clock Enable: CKE controls internal clock
  • When CKE is low, internal clock for the following cycle is ceased
  • CKE is also used to select auto / self refresh
  • After self refresh mode is started, CKE bees asynchronous input
  • Self refresh is maintained as long as CKE is low
  • Chip Select: When /CS is high, any mand means No Operation
  • bination of /RAS, /CAS, /WE defines basic mands
  • A0-12 specify the Row / Column Address in conjunctio