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M5M51016BRT-12VL - 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Datasheet Summary

Description

The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

Features

  • Power supply current Type name Access time (max) Active (max) stand-by (max) 60µA (VCC = 3.6V) M5M51016BTP,RT-12VL 120ns 12mA (1MHz) M5M51016BTP,RT-12VLL 120ns 12µA (VCC = 3.6V) 0.3µA (VCC = 3.0V, typ) Single +3.0V power supply Low stand-by current 0.3µA (typ. ) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents data contention in the I/O bus Common data I/.

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Datasheet Details

Part number M5M51016BRT-12VL
Manufacturer Mitsubishi
File Size 75.91 KB
Description 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Datasheet download datasheet M5M51016BRT-12VL Datasheet
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Full PDF Text Transcription

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M5M51016BTP,RT-12VL, -12VLL 1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package).
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