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BA01207 - GaAs HBT HYBRID IC

Description

The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.

unit : milimeter 1 8 7 6 4 4.5 5 1.5max.

Features

  • Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input.
  • and output matching.
  • Use DC block for input port 2 3 1.45.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND FEATURES Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input* and output matching *Use DC block for input port 2 3 1.45 APPLICATION N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand set. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp.
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