Datasheet Summary
MITSUBISHI SEMICONDUCTOR <GaAs HBT>
Specifications are subject to change without notice.
GaAs HBT HYBRID IC
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone.
Outline Drawing unit : milimeter 1 8 7 6 4 4.5 5 1.5max. 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND
Features
Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input- and output matching
- Use DC block for input port
2 3
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand...