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MGF0917A Datasheet L & S BAND GaAs FET

Manufacturer: Mitsubishi Electric

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General Description

The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

Overview

MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched.

Key Features

  • High output power Po=24dBm(TYP. ) @f=1.9GHz,Pin=4dBm.
  • High power gain Gp=21dB(TYP. ) @f=1.9GHz.
  • High power added efficiency ηadd=38%(TYP. ) @f=1.9GHz,Pin=4dBm.
  • Hermetic Package.

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