MGF0917A Description
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MGF0917A Key Features
- High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
- High power gain Gp=21dB(TYP.) @f=1.9GHz
- High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=4dBm
- Hermetic Package
- For UHF Band power amplifiers
- Vds=10V
- Ids=75mA
- Rg=2kΩ
- 01:Tape & Reel(1K), -03:Trai(50pcs)