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MGF0951P - L & S BAND GaAs FET

Description

The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

Features

  • High output power Po=31dBm(TYP. ) @f=2.15GHz,Pin=20dBm.
  • High power gain Glp=13dB(TYP. ) @f=2.15GHz.
  • High power added efficiency ηadd=50%(TYP. ) @f=2.15GHz,Pin=20dBm.
  • Plastic Mold Lead-less PKG.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm • High power gain Glp=13dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=200mA • Rg=500Ω Delivery Tape & Reel(1.
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