MGF0951P datasheet, fet equivalent, Mitsubishi Electric

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Features and benefits

* High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
* High power gain Glp=13dB(TYP.) @f=2.15GHz
* High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pi.

Description

The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES
* High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
* High power gain Glp=13dB(TYP.) @f=2.15GHz
* High power added efficiency ηa.

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