MGFC45B3436B
MGFC45B3436B is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET >
- 3.6 GHz BAND / 30W
DESCRIPTION
The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4
- 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Class AB operation Internally matched to 50(ohm) system
- High output power
Po(SAT)=30W (TYP.) @f=3.4
- 3.6GHz
- High power gain
GLP=11.0dB (TYP.) @f=3.4
- 3.6GHz
- Distortion
ACP=-45dBc (TYP.) @f=3.4
- 3.6GHz
REMENDED BIAS CONDITIONS
- VDS=12V
- ID=0.8A
-...
