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MGFS52BN2122A Datasheet power GaAs FET

Manufacturer: Mitsubishi Electric

General Description

The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Overview

< L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.

Key Features

  • Push-pull configuration.
  • High output power Pout=160W (TYP. ) @f=2.17GHz.
  • High power gain GLP=12.0dB (TYP. ) @f=2.17GHz.
  • High power added efficiency P. A. E. =48% (TYP. ) @f=2.17GHz.