Part number: 2SC1971
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 127.94KB
Download: 📄 Datasheet
Description: NPN Transistor
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2SC1970 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION ·High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Relia.
2SC1971 - Silicon NPN Power Transistor
(Inchange Semiconductor)
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1971
DESCRIPTION ·High Power Gain: Gpe≥ .
2SC1971 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
2SC1971
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEAT.
2SC1972 - NPN Transistor
(Mitsubishi Electric Semiconductor)
.
2SC1972 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEAT.
2SC1972 - Silicon NPN POWER TRANSISTOR
(HGSemi)
HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC1972
Note : Above parameters , ratings , limits and cond.
2SC1972 - silicon NPN epitaxial planar type transistor
(Eleflow)
2SC1972
Description
The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal .
2SC1973 - NPN Transistor
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2SC1974 - Si NPN Transistor
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2SC1975 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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2SC1975
DESCRIPTION ·Collector-Base Breakdown Voltage
: V(BR)CBO=160V(Min) ·Withstands worst.
