RD06HVF1 datasheet, applications equivalent, Mitsubishi Electric Semiconductor

datasheet Download (Size : 541.43KB)

RD06HVF1 Features and benefits

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2.

RD06HVF1 Application

4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power .

RD06HVF1 Description

Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage.

Image gallery