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RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications

Description

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Features

  • High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3).

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Datasheet Details

Part number RD06HVF1
Manufacturer Mitsubishi Electric
File Size 541.43 KB
Description MOS FET type transistor specifically designed for VHF RF power amplifiers applications
Datasheet download datasheet RD06HVF1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation.
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