Datasheet Summary
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS pliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection.
4.9+/-0.15
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1.0+/-0.05
Features
- High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
- High Efficiency: 60%typ. (175MHz)
- High Efficiency: 55%typ. (520MHz)
- Integrated gate protection...