2N697 - NPN Transistor

This page provides the datasheet information for the 2N697, a member of the 2N696 NPN Transistor family.

Motorola

Datasheet Details

Part number	2N697
Manufacturer	Motorola
File Size	64.61 KB
Description	NPN Transistor
Datasheet	2N697 Datasheet
Additional preview pages of the 2N697 datasheet.

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Full PDF Text Transcription

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2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.0 Vdc Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C Operating and Storage Junction Temperature Range TJ' Tstg 0.6 13.3 2.0 13.3 -65 to +200 watt mWrC Watts mWrC °c ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.

Published: Nov 14, 2018 |