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2N697 Datasheet

NPN Transistor

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2N696 (SILICON)
2N697
CASE 31
(TO-5)
NPN silicon annular transistors designed for small-
signal amplifier and general purpose switching appli-
cations.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCB 60
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ' Tstg
0.6
13.3
2.0
13.3
-65 to +200
watt
mWrC
Watts
mWrC
°c
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(Ic = 100 mAdc, RBE = 10 ohms)
Symbol Min Max Unit
BVCER"
40
Vdc
Collector-Base Breakdown Voltage
(IC = 100 j.tAdc, IE = 0)
BVCBO
60
Vdc
Emitter-Base Breakdown Voltage
(~ = 100 !.LAdc, IC = 0)
BVEBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, ~ = 0)
(VCB= 30 Vdc, IE = 0, TA = 1500 C)
ICBO
- !.LAdc
1.0
- 100
ON CHARACTERISTICS
DC Current Gain.
(IC = 150 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage·
(IC = 150 mAdc, ~ = 15 mAdc)
Base-Emitter Saturation Voltage·
(IC = 150 mAdc, IB = 15 mAdc)
2N696
2N697
hFE•
.
VCE(sat)
VBE(sat)*
20
40
-
-
-
60
120
Vdc
1.5
Vdc
1.3
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)'
Output Capacitance
(VCB = 10 Vdc, ~ =.0)
2N696
2N697
fT MHz
40 -
50 -
-Cob
pF
35
• Pulse Test: Pulse Length ::; 12 ms, Duty Cycle::; 2.0%.
2-61


Part Number 2N697
Description NPN Transistor
Maker Motorola
PDF Download

2N697 Datasheet PDF






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