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MRF18030BR3 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 – 1990 MHz. • Typical GSM Performance: Power Gain – 14 dB (Typ) @ 30 Watts Efficiency – 50% (Typ) @ 30 Watts • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power • Excellent Thermal Stability • Available in Tape and Reel.
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