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MRF21125S - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF21125S datasheet PDF. This datasheet also covers the MRF21125 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X 100000 pF Chip Capaci

Features

  • rtion versus Output Power Figure 8. Power Gain versus Output Power MRF21125 MRF21125S MRF21125SR3 6.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21125_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21125SR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF21125R3 RF Power Field Effect Transistors Freescale Semiconductor
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MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21125SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF21125 RF POWER FIELD EFFECT TRANSISTORS
MRF21120 RF POWER FIELD EFFECT TRANSISTOR
MRF21180R6 RF Power Field Effect Transistor
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
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