MRF21125S
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21125/D
The RF Sub- Micron MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
- P C S / c e l l u l a r r a d i o a n d W L L applications.
- Typical 2- carrier W- CDMA Performance for VDD = 28 Volts, IDQ = 1600 m A, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 d B @ 0.01% probability on CCDF. Output Power
- 20 Watts Efficiency
- 18% Gain
- 13 d B IM3
- - 43 d Bc ACPR
- - 45 d Bc
- 100% Tested under 2- carrier W- CDMA
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion...
