Download the MRF373ASR1 datasheet PDF.
This datasheet also covers the MRF373AR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.
General Description
18 pF Chip Capacitors, B Case, ATC 12 pF Chip Capacitor, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 51 pF Chip Capacitors, B Case, ATC 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) 15 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case,
Key Features
r product or service names are the property of their respective owners. E Motorola, Inc. 2002.
How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P. O. Box 5405, Denver, Colorado 80217. 1.
Full PDF Text Transcription for MRF373ASR1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MRF373ASR1. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Des...
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ield Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.
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MRF373ASR1 Datasheet
