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MRF5S19130SR3 - N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF5S19130SR3 datasheet PDF. This datasheet also covers the MRF5S19130R3 variant, as both devices belong to the same n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

Short RF Bead 0.8 pF Chip Capacitor, B Case 0.6 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1 µF, 25 V Tantalum Capacitors 47 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capac

Features

  • = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S19130R3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S19130HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19130HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19150HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19150HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF5S19060MBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19130R3 N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF5S19150R3 RF Power Field Effect Transistors
MRF5S19150SR3 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz.
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