MRF5S19150R3 RF Power Field Effect Transistors

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF5S19150/D MRF5S19150R3 RF Power.
MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.

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Datasheet Specifications

Part number: MRF5S19150R3
Manufacturer: Motorola
File Size: 450.77 KB
Datasheet: MRF5S19150R3_Motorola.pdf
Description: RF Power Field Effect Transistors

Features

* TICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. , N
* CDMA Gps ACPR VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N
* CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCD

Applications

* at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13

MRF5S19150R3 Distributors

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MRF5S19150R3 Power Field Effect Transistors Motorola

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