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MRF857S - NPN SILICON RF POWER TRANSISTOR

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  • , Denver, Colorado 80217. 303.
  • 675.
  • 2140 or 1.
  • 800.
  • 441.
  • 2447 JAPAN: Nippon Motorola Ltd. : SPD, Strategic Planning Office, 4.
  • 32.
  • 1, Nishi.
  • Gotanda, Shinagawa.
  • ku, Tokyo 141, Japan. 81.
  • 3.
  • 5487.
  • 8488 Mfax™: RMFAX0@email. sps. mot. com.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF857/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.1 Watts CW Minimum Power Gain = 12.5 dB Minimum ITO = + 43 dBm Typical Noise Figure = 5.25 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 – 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power • Will Withstand RF Input Overdrive of 0.
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