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MRF8S7120NR3 - RF Power Field Effect Transistor

Description

Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26--RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC Illino

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.2 19.2 19.2 ηD (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2 --37.6 MRF8S7120NR3 728-768 MHz, 32 W AVG.
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