Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF8S7120N .. Rev. 0, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.2 19.2 19.2 ηD (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2...