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MTD20N06HDL Datasheet Power MOSFET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

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Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount N–Channel.

Key Features

  • speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C GATE.
  • TO.

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