2N7000 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N- Channel - Enhancement 3 DRAIN 2 GATE 1 SOURCE Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous - Non- repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 - 55 to +150 m W m W/°C °C Unit Vdc Vdc Vdc Vpk m Adc CASE 29- 04, STYLE 22 TO- 92 (TO- 226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds Symbol RθJA TL Max 357 300 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain- Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate- Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS - - IGSSF - 1.0 1.0 - 10 60 - Vdc µAdc m Adc n Adc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 m Adc) Static Drain- Source On- Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 m Adc) Drain- Source On- Voltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 m Adc) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Preferred devices are Motorola remended choices for future use and best overall value. VGS(th) r DS(on) Vdc Ohm - - VDS(on) - - 5.0 6.0 Vdc 2.5 0.45 REV 3 © Motorola, Inc. 1997 Motorola Small- Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max...