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Motorola Electronic Components Datasheet

BSS123LT1 Datasheet

TMOS FET Transistor(N-Channel)

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS123LT1/D
TMOS FET Transistor
N–Channel
3 DRAIN
BSS123LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp 50 µs)
Drain Current
Continuous(1)
Pulsed(2)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(3)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS123LT1 = SA
1
GATE
®
2 SOURCE
Symbol
VDSS
VGS
VGSM
ID
IDM
Value
100
± 20
± 40
0.17
0.68
Unit
Vdc
Vdc
Vpk
Adc
Symbol
PD
RqJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS(4)
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
gfs
1. The Power Dissipation of the package may result in a lower continuous drain current.
v v2. Pulse Width 300 ms, Duty Cycle 2.0%.
 3. FR– 5 = 1.0 0.75 0.062 in.
v v4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Min
100
0.8
80
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
Typ Max Unit
— — Vdc
µAdc
— 15
— 60
— 50 nAdc
— 2.8 Vdc
5.0 6.0
— — mmhos
1


Motorola Electronic Components Datasheet

BSS123LT1 Datasheet

TMOS FET Transistor(N-Channel)

No Preview Available !

BSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss — 20 — pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss — 9.0 — pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Crss — 4.0 — pF
Turn–On Delay Time
Turn–Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
td(on)
20
ns
VGS = 10 Vdc, RGS = 50 )
td(off)
40
ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
v v4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VSD
— 1.3
V
2.0
1.8 TA = 25°C
1.6
1.4
VGS = 10 V
9V
1.2 8 V
1.0
7V
0.8
0.6 6 V
0.4 5 V
0.2 4 V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
– 55°C
25°C
125°C
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0 VGS = 10 V
ID = 200 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 60
– 20
+ 20 + 60
T, TEMPERATURE (°C)
+ 100
Figure 3. Temperature versus Static
Drain–Source On–Resistance
+ 140
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
– 60
VDS = VGS
ID = 1.0 mA
– 20 + 20 + 60 + 100
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
+ 140
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number BSS123LT1
Description TMOS FET Transistor(N-Channel)
Maker Motorola Inc
Total Page 4 Pages
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