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BSS123 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON)
6.0Ω @ VGS = 10V
ID
TA = +25°C
0.17A
Description and Applications
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology. These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as:
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
SOT23
D
D
G
Top View
S
Equivalent Circuit
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
BSS123-7-F
BSS123Q-13
BSS123Q-7
Qualification
Commercial
Automotive
Automotive
Case
SOT23
SOT23
SOT23
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K23 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
BSS123
Document number: DS30366 Rev. 20 - 2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
1 of 7
www.diodes.com
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
March 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

BSS123 Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Continuous
Continuous
Pulsed
BSS123
Symbol
VDSS
VGSS
ID
IDM
Value
100
±20
170
680
Unit
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Max
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage , Forward
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSSF
VGS(TH)
RDS(ON)
gFS
VSD
Ciss
Coss
Crss
tD(ON)
tR
tD(OFF)
tF
Min Typ Max
100 -
-
- - 0.1
- - 30
- - 10
- - 50
0.8 1.4 2.0
- - 6.0
- - 10
80 370 -
- 0.84 1.3
- 22 60
- 3.5 15
- 2.0 6
- -8
- -8
- - 13
- - 16
Unit
V
A
A
nA
nA
V
ms
V
Test Condition
VGS = 0V, ID = 250A
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V
@ TA = 150°C (Note 8)
VDS = 20V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = VGS, ID = 1mA
VGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
VDS =10V, ID = 0.17A, f = 1.0KHz
VGS = 0V, IS = 0.34A
pF VDS = 25V, VGS = 0V, f = 1.0MHz
ns
ns VGS = 10V, VDD = 30V,
ns ID = 0.28A, RGEN = 50Ω
ns
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
BSS123
Document number: DS30366 Rev. 20 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated


Part Number BSS123
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes Incorporated
Total Page 7 Pages
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