BSS123 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
* 0.17 A, 100 V
* RDS(on) = 6 W @ VGS = 10 V
* RDS(on) = 10 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(on)
* Rugged and Reliable.
such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
* 0.17 A, 1.
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