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Infineon Technologies Electronic Components Datasheet

BSS123 Datasheet

SIPMOS Small-Signal-Transistor

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Rev. 1.0
SIPMOSSmall-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
BSS123
Product Summary
VDS
RDS(on)
ID
100
6
0.17
V
A
Gate
pin1
Drain
pin 3
SOT23
3
Source
pin 2
2
1 VPS05161
Type
BSS123
BSS123
Package
SOT23
SOT23
Ordering Code
Q62702-S512
Q67000-S245
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
ID puls
TA=25°C
Reverse diode dv/dt
dv/dt
IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
0.17
0.14
0.68
6
±20
Class 1
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10


Infineon Technologies Electronic Components Datasheet

BSS123 Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

Thermal Characteristics
Parameter
Rev. 1.0
Characteristics
Thermal resistance, junction - ambient
at minimum footprint
BSS123
Symbol
Values
Unit
min. typ. max.
RthJA
- - 350 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = VDS
ID=50µA
Zero gate voltage drain current
VDS=100V, VGS=0, Tj=25°C
VDS=100V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.13A
Drain-source on-state resistance
V(BR)DSS 100
-
-V
VGS(th) 0.8 1.4 1.8
IDSS
IGSS
µA
- - 0.01
- -5
- - 10 nA
RDS(on)
-
4 10
RDS(on)
-
3
6
VGS=10V, ID=0.17A
Page 2
2002-12-10


Part Number BSS123
Description SIPMOS Small-Signal-Transistor
Maker Infineon Technologies AG
Total Page 8 Pages
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