* include:
* Improved Efficiency Due to:
* Low Base Drive Requirements (High and Flat DC Current Gain hFE)
* Low Power Losses (On
* State and Switching Operations)
* Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ)
* Fast Switching: @ IC = 2.0 A,
BUL45F
Motorola Inc
392.60 KB
Npn transistor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUL45/D Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE ™ Data Sheet.
📁 Related Datasheet
BUL45 NPN Transistor (Motorola Inc)
BUL45 NPN Transistor (ON Semiconductor)
BUL45 SILICON POWER TRANSISTOR (SavantIC)
BUL45D2 NPN Transistor (Motorola Inc)
BUL45D2 NPN Transistor (ON Semiconductor)
BUL45D2G Bipolar NPN Power Transistor (ON Semiconductor)
BUL45F NPN Transistor (ON Semiconductor)
BUL45G NPN Silicon Power Transistor (ON Semiconductor)
BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
BUL416T NPN Transistor (INCHANGE)
