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BUL45G - NPN Silicon Power Transistor

Datasheet Summary

Features

  • Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A.
  • Full Characterization at 125C.
  • Tight Parametric Distributions Consistent Lot--to--Lot.
  • These Devices are Pb--Free and are RoHS Compliant.

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Datasheet preview – BUL45G

Datasheet Details

Part number BUL45G
Manufacturer ON Semiconductor
File Size 373.12 KB
Description NPN Silicon Power Transistor
Datasheet download datasheet BUL45G Datasheet
Additional preview pages of the BUL45G datasheet.

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Full PDF Text Transcription

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BUL45G NPN Silicon Power Transistor High Voltage Switch-mode Series Designed for use in electronic ballast (light ballast) and in switch-mode power supplies up to 50 W. Features  Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.
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