BUL45G
Overview
- Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On--State and Switching Operations) Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ) @ IC = 2.0 A, IB1 = IB2 = 0.4 A
- Full Characterization at 125°C
- Tight Parametric Distributions Consistent Lot--to--Lot
- These Devices are Pb--Free and are RoHS Compliant*
