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MRF6V3090NR1 - RF Power Field Effect Transistors

General Description

22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacitor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resi

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Input Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. R5 Suffix =.

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Datasheet Details

Part number MRF6V3090NR1
Manufacturer Motorola Semiconductor
File Size 963.01 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF6V3090NR1 Datasheet

Full PDF Text Transcription for MRF6V3090NR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF6V3090NR1. For precise diagrams, and layout, please refer to the original PDF.

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Later...

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0 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 22.0 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --62.

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