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2N5884 - Complementary Power Transistors

Key Features

  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A.
  • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres PNP 2N5884 NPN 2N5886 25 Ampere Complementary Silicon Power T.

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Datasheet Details

Part number 2N5884
Manufacturer Multicomp
File Size 285.50 KB
Description Complementary Power Transistors
Datasheet download datasheet 2N5884 Datasheet

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Other Datasheets by Multicomp

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.