2N6609 transistor equivalent, complementary power transistor.
* High Power Dissipation PD = 150W (TC = 25°C).
* High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at.
Image gallery
TAGS
Download (Size : 348.81KB)