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2N6609 Datasheet - NTE

Silicon PNP Transistor

2N6609 Features

* D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector

* Emitter

2N6609 Datasheet (65.14 KB)

Preview of 2N6609 PDF

Datasheet Details

Part number:

2N6609

Manufacturer:

NTE

File Size:

65.14 KB

Description:

Silicon pnp transistor.

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2N6609 Silicon PNP Transistor NTE

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