NCE75H26T Description
The NCE75H26T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
NCE75H26T Key Features
- VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V （Typ：2.3 mΩ）
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Automotive