Datasheet4U Logo Datasheet4U.com

NCE01H14T - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number NCE01H14T
Manufacturer NCE Power Semiconductor
File Size 320.64 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H14T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCE01H16 N-Channel MOSFET VBsemi
NCE0103 N-Channel 100V MOSFET VBsemi
NCE0157A2 N-Channel Power MOSFET VBsemi
NCE02H10T N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
NCE1520 N-Channel 150-V MOSFET VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number Description
NCE01H14 N-Channel Enhancement Mode Power MOSFET
NCE01H14C N-Channel Enhancement Mode Power MOSFET
NCE01H14D N-Channel Enhancement Mode Power MOSFET
NCE01H10 N-Channel Enhancement Mode Power MOSFET
NCE01H10D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
http://www.ncepower.com Pb Free Product NCE01H14T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.