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NCE01H21TC - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01H21TC
Manufacturer	NCE Power Semiconductor
File Size	302.51 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H21TC-NCEPowerSemiconductor.pdf

NCE01H21TC Product details

Description

The NCE01H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS =100V,ID =210A RDS(ON) < 4.2mΩ @ VGS=10V （Typ：3.3 mΩ）.
Good stability and uniformity with high EAS.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |