NCE1550F mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and cur.
General Features
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
Schematic diagram
* High density cell design fo.
The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
Schematic diagram
* H.
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