NCE15H10 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features - VDS =150V,ID =100A RDS(ON) <12mΩ @ VGS=10V (Typ:9.8mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Special designed for convertors and power controls - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package TO-220-3L Reel Size - Tape width - Quantity -...