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NCE Power Semiconductor

NCE15H10 Datasheet Preview

NCE15H10 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE15H10
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE15H10 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
General Features
VDS =150V,ID =100A
RDS(ON) <12m@ VGS=10V (Typ:9.8m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15H10
NCE15H10
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC =25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
100
70
390
370
2.47
1100
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE15H10 Datasheet Preview

NCE15H10 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE15H10
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.41 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=150V,VGS=0V
VGS=±20V,VDS=0V
150 170
--
--
-
1
±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=40A
2 3.2
- 9.8
150 -
4
12
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 13000
- 640
-
-
PF
PF
Crss
- 556
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
,RG=2.5,VGS=10V
VDS=30V,ID=30A,
VGS=10V
- 32.5
- 30
- 113
- 48
- 326
- 62
- 128
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
-
IS -
trr Tj=25,IF=75A,di/dt=100A/μs -
Qrr
(Note3)
-
- 1.2
V
- 100
A
52.5 nS
82.5 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE15H10
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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