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NCE15H11T - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE15H11T
Manufacturer	NCE Power Semiconductor
File Size	335.16 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE15H11T-NCEPowerSemiconductor.pdf

NCE15H11T Product details

Description

The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （Typ：10 mΩ）.
Good stability and uniformity with high EAS.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 6, 2015 |