NCE15H11T Datasheet, Mosfet, NCE Power Semiconductor

✔ NCE15H11T Features

VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （Typ：10 mΩ）
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High densi

✔ NCE15H11T Application

and a wide variety of other applications. General Features
VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （

PDF File Details

NCE Power Semiconductor manufacturer logo

Part number:

NCE15H11T

Manufacturer:

NCE Power Semiconductor

File Size:

335.16 KB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automot

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NCE15H11T N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor