NCE15H10 Datasheet, Mosfet, NCE Power Semiconductor

NCE15H10 Features

• Mosfet
• VDS =150V,ID =100A RDS(ON) <12mΩ @ VGS=10V (Typ:9.8mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE15H10

Manufacturer:

NCE Power Semiconductor

File Size:

331.05kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE15H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable fo

NCE15H10 Application

• Applications General Features
• VDS =150V,ID =100A RDS(ON) <12mΩ @ VGS=10V (Typ:9.8mΩ)
• High density cell design for ultra low Rd

TAGS

NCE15H10

NCE Power Semiconductor

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