NCE1505S - N-Channel Enhancement Mode Power MOSFET
NCE1505S Features
* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ）
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Low Gate to Drain Charge to Reduce Switching Losses Schematic diagram Application
* Power switching application
